s mhop microelectronics c orp. a stu/d419s symbol v ds v gs i dm e as a p d c -55 to 150 i d units parameter -40 -50 -175 v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj product summary v dss i d r ds(on) (m ) max -40v -58a 16 @ vgs=4.5v 11.5 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. p-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous(package limited) -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg ver 1.0 www.samhop.com.tw sep,15,2008 1 details are subject to change without notice. 50 c/w thermal resistance, junction-to-ambient r ja t c =25 c esd protected. g g s s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) g g s s d d s t d s e ri e s to - 2 5 1 ( i - p a k ) 1.8 c/w thermal resistance, junction-to-case r jc 224 a t c =25 c -58 w 70 a -continuous(silicon limited) -continuous a t a =25 c -11 maximum power dissipation t a =25 c 2.5 a w green product
4 symbol min typ max units bv dss -40 v 1 i gss 10 ua v gs(th) -1 v 9.6 g fs 9 s v sd c iss 3550 pf c oss 710 pf c rss 420 pf q g 40 nc 70 nc q gs 345 nc q gd 125 t d(on) 87 ns t r 9 ns t d(off) 20 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-source charge v dd =-20v i d =-1.0a v gs =-10v r gen =3.3 ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-20a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-20a v ds =-10v , i d =-20a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =-250ua v ds =-32v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =-250ua reverse transfer capacitance on characteristics v gs =-4.5v , i d =-17a 11.5 12.5 16 m ohm f=1.0mhz v ds =-20v,i d =-20a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s = -2.0a -0.77 -1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=1.25mh,v dd = 30v .(see figure13) stu/d419s ver 1.0 www.samhop.com.tw sep,15,2008 2 nc v ds =-20v,i d =-20a,v gs =-4.5v 42 _ _ c -1.5 -3 is maximum continuous drain-source forward current a c -2.0 _ b
stu/d419s ver 1.0 www.samhop.com.tw sep,15,2008 3 -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 v gs =-2v v gs =-10v v gs =-4.5v v gs =-2.5v 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 1 tj=125 c -55 c 25 c 25 125 tj( c) 100 50 75 150 v gs =-4v i d =-17a v gs =-10v i d =-20a 0 0.8 1.8 1.6 1.4 1.2 1.0 24 20 16 12 8 4 0 5101520 25 1 v gs =10v v gs =4.5v 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =-250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua
stu/d419s ver 1.0 www.samhop.com.tw sep,15,2008 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 100 10 1 0.1 1 10 40 100 v gs =-10v s ingle p uls e t a =25 c dc 10 m s 1ms 100u s r ds ( on) lim it 30 25 20 15 10 5 0 2468 10 0 i d =-20a 125 c 25 c 75 c 20.0 10.0 1.0 0 0.4 0.8 1.2 1.6 2.0 25 c 125 c 5.0 75 c 15.0 4800 4000 3200 2400 1600 800 0 ciss crss 10 8 6 4 2 0 012.525 37.5 50 62.5 75 87.5 100 v ds =-20v i d =-20a 1000 100 1 10 6 10 60 100 600 600 300 6000 t d(off) tr tf td (o n) 3 vds=-20v,id=-1a vgs=-10v 0 5 10 15 20 25 30 coss 500
t p v (br )dss i as r g i as 0.01 t p d.u.t l v ds + - v dd dr ive r a 15v 20v f igure 13a. figure 13b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p ed in d u ct i ve stu/d419s ver 1.0 www.samhop.com.tw sep,15,2008 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r / ja (t)=r (t) * r / ja 2. r / ja =s ee datas heet 3. t jm- t a =p dm *r / ja (t) 4. duty cycle, d=t 1 /t 2 single pulse
stu/d419s ver 1.0 www.samhop.com.tw sep,15,2008 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
stu/d419s ver 1.0 www.samhop.com.tw sep,15,2008 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
stu/d419s ver 1.0 www.samhop.com.tw sep,15,2008 8 to251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h
|
